型号 | SLD500/20 |
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硅片类型 Wafer Type | Standard, Taiko Wafer, Bonding Wafer |
硅片尺寸 Wafer Size | 150mm/200mm/300mm Wafer (Notch, Flat) |
硅片厚度 Wafer Thickness | Taiko≥50μm/Non- Taiko≥150μm |
预对准方式 Pre-Alignment Method | Notch, Flat |
片库类型 Port Type |
Open Cassette, SMIF, FOUP Dual port, 8” wafer (200mm) × 52 wafers by cassette-less transfer support 13 slot or 25 slot cassette |
扫描方式 Scanning Mode | Y-scan & X-step |
退火均匀性 Annealing Uniformity |
Rs Uniformity: 3sigma < 2%, Rs Repeatability: Wafer to wafer 3sigma<1% |
退火非均匀性 Annealing NU% |
527nm DPSS: <1% 808nm: <1% |
脉冲能量稳定性 |
527nm DPSS: <1% 808nm : <1% |
激活深度 Activation Depth | Green Laser >3μm (Green + IR >5μm ) |
激活率 Activation Ratio |
> 80% (B Implant) > 90% (P Implant) |
产率 Throughput |
> 20wph (8” wafer, 3×0.2mm, overlap Y80%/X50% >14wph(8” wafer, 3×0.1mm, overlap Y80%/X50% |
开机率 Uptime | > 95 % |
激光波长及功率 Laser Wave Length & Power |
527nm DPSS: >150w 808nm : >320w |
527nm激光脉宽 527nm Laser Pulse Length | 300 ±50ns @ 3kHz |
527nm激光频率 527nm Laser Frequency | 1~10kHz |
527nm光斑尺寸 527nm Beam Size |
(3±0.3mm) × (0.1±0.01mm) : 5J/cm2×2 (3±0.3mm) × (0.2±0.02mm) (Option) : 2.5J/cm2×2 |
808nm激光脉宽808nm Laser Pulse Length | CW & Pusle Mode (20~100us) |
808nm光斑尺寸808nm Beam Size | (3±0.3mm) × (0.15±0.015mm) : Max: 70KW/cm2 |
延迟时间 Delay Times |
527nm DPSS: 0-10µs 808nm : 0-10µs |
延迟波动 Delay Fluctuation | < 20ns |
重叠率范围 Overlay Range | 0~100% |
焦深控制Focus Stability | ≤ ±100μm |
反射率监控系统 Reflective ratio monitor system | Yes |
颗粒度控制 Partical Control | Yes |
自动化 Automation | Support SECS-II & Barcode Reader |
安全性 Safety |
Drain pan with water leak detector sensor, Electric cabinet, Generator Rack, Smoke detector, Power cabinet |
传输破片率 Wafer tansfer broken ratio | < 1/100000 |
Mean Time Between Failure (MTBF) | ≥ 1500hrs |
Mean Time To Repair (MTTR) | ≤ 2hrs |
Mean Time Between Assistance (MTBA) | ≥ 175hrs |
Mean Wafer Between Clean (MWBC) | ≥ 20000 |
Cycling run without Alarm | ≥ 15000 |