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技术参数 Specifications
型号 SLD500/20
硅片类型 Wafer Type Standard, Taiko Wafer, Bonding Wafer
硅片尺寸 Wafer Size 150mm/200mm/300mm Wafer (Notch, Flat)
硅片厚度 Wafer Thickness Taiko≥50μm/Non- Taiko≥150μm
预对准方式 Pre-Alignment Method Notch, Flat
片库类型 Port Type Open Cassette, SMIF, FOUP
Dual port, 8” wafer (200mm) × 52 wafers by
cassette-less transfer
support 13 slot or 25 slot cassette
扫描方式 Scanning Mode Y-scan & X-step
退火均匀性 Annealing Uniformity Rs Uniformity: 3sigma < 2%,
Rs Repeatability: Wafer to wafer 3sigma<1%
退火非均匀性 Annealing NU% 527nm DPSS: <1%
808nm: <1%
脉冲能量稳定性 527nm DPSS: <1%
808nm : <1%
激活深度 Activation Depth Green Laser >3μm (Green + IR >5μm )
激活率 Activation Ratio > 80% (B Implant)
> 90% (P Implant)
产率 Throughput > 20wph (8” wafer, 3×0.2mm, overlap Y80%/X50%
>14wph(8” wafer, 3×0.1mm, overlap Y80%/X50%
开机率 Uptime > 95 %
激光波长及功率 Laser Wave Length & Power 527nm DPSS: >150w
808nm : >320w
527nm激光脉宽 527nm Laser Pulse Length 300 ±50ns @ 3kHz
527nm激光频率 527nm Laser Frequency 1~10kHz
527nm光斑尺寸 527nm Beam Size (3±0.3mm) × (0.1±0.01mm) : 5J/cm2×2
(3±0.3mm) × (0.2±0.02mm) (Option) : 2.5J/cm2×2
808nm激光脉宽808nm Laser Pulse Length CW & Pusle Mode (20~100us)
808nm光斑尺寸808nm Beam Size (3±0.3mm) × (0.15±0.015mm) : Max: 70KW/cm2
延迟时间 Delay Times 527nm DPSS: 0-10µs
808nm : 0-10µs
延迟波动 Delay Fluctuation < 20ns
重叠率范围 Overlay Range 0~100%
焦深控制Focus Stability ≤ ±100μm
反射率监控系统 Reflective ratio monitor system Yes
颗粒度控制 Partical Control Yes
自动化 Automation Support SECS-II & Barcode Reader
安全性 Safety Drain pan with water leak detector sensor, Electric cabinet,
Generator Rack, Smoke detector, Power cabinet
传输破片率 Wafer tansfer broken ratio < 1/100000
Mean Time Between Failure (MTBF) ≥ 1500hrs
Mean Time To Repair (MTTR) ≤ 2hrs
Mean Time Between Assistance (MTBA) ≥ 175hrs
Mean Wafer Between Clean (MWBC) ≥ 20000
Cycling run without Alarm ≥ 15000
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